EARTH NET

Brand Owner (click to sort) Address Description
EARTHNET EARTHRISE TRADING COMPANY 424 Payran Street Petaluma CA 94952 EARTH NET;animal feed; namely, cat food, cat treats, dog biscuits, dog food, edible dog treats, fish food and bird seeds and cat litter;
EARTHNET EARTHRISE TRADING COMPANY 424 Payran Street Petaluma CA 94952 EARTH NET;lawn and garden care products; namely, fertilizers for agricultural and domestic use, fertilizer peat, plant food and potting soil;
EARTHNET EARTHRISE TRADING COMPANY 424 Payran Street Petaluma CA 94952 EARTH NET;household cleaning preparations, carpet cleaning preparations, car care and cleaning preparations; namely, cleaner solvent compound for fabric surfaces, hard surfaces and vinyl surfaces, furniture polish, laundry detergent, floor wax, dish washing detergent, cosmetics and toilet preparations for hands, face and body, skin soaps in liqued and solid form, hand and body lotions, bubble baths, bath and body powder, essential oils for personal use, perfume, cologne, personal deodorants, hair spray, hair dressings, hair rinses, hair dye, skin toners, skin creams, toothpaste, dental cleaning, preparations, and shaving preparations; namely, balm, cream and lotion;
EARTHNET EARTHRISE TRADING COMPANY 424 Payran Street Petaluma CA 94952 EARTH NET;lawn and garden care products, namely fertilizers for agricultural and domestic use, fertilizer peat, plant food, and potting soil;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.