GAN WAFERS LASER DIODES

Brand	Owner	Address	Description
FGAN	NGK INSULATORS, LTD.	2-56 Suda-cho, Mizuho-ku Nagoya-shi Aichi-ken 467-8530 Japan	GaN wafers for laser diodes, power devices and radio-frequency (RF) devices; nitride semiconductor wafers; semiconductor wafers; compound semiconductor wafers; semiconductor devices;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

In one exemplary embodiment, apparatus is provided with a plurality of laser diodes, sensing means and control means. During normal operation, the laser diodes produce a mixed light. The sensing means measures light that is output by the laser diodes; and the control means 1) compares the measured light to a spectral reference, and 2) sets drive signals of the laser diodes in response to the comparison. In a related and exemplary method, 1) a mixed light is produced using a plurality of laser diodes of different colors, 2) a measurement of light produced by the laser diodes is compared to a spectral reference, and 3) drive signals of the laser diodes are automatically set in response to the comparison.