NAND TYPE FLASH MEMORIES

Brand	Owner (click to sort)	Address	Description
BENAND	KIOXIA CORPORATION	1-21, Shibaura 3-chome, Minato-ku Tokyo 108-0023 Japan	NAND-type flash memories;
S M A R T NAND	KABUSHIKI KAISHA TOSHIBA	1-1, Shibaura 1-chome, Minato-ku Tokyo 105-8001 Japan	NAND-type flash memories;SMART NAND;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

A combination EEPROM, NOR-type Flash and NAND-type Flash nonvolatile memory contains memory cells in which a floating gate transistor forms a NAND-type Flash nonvolatile memory cell, forms a NOR-type Flash nonvolatile memory cells and with one or two select transistors forms a two and three transistor EEPROM cell. The nonvolatile memory cells use a large positive programming voltage (+18V) applied to the word lines or select gating lines for programming the memory cells and a large negative erasing voltage (?18V) applied to the word lines or select gating lines for erasing the memory cells. The NOR-type Flash nonvolatile memory array is used to store code of embedded processor programs or application programs for smart cards. The EEPROM array is preferably used to store byte alterable data and NAND-type Flash nonvolatile memory array is used to store personalized biometric data such as Iris, DNA, facial picture and finger prints.