CASES COVERS CELL

Brand Owner (click to sort) Address Description
IPONCHO DKP Designs, Inc. 222 N. Sepulveda Blvd., Suite 1330 El Segundo CA 90245 Cases and covers for cell phones; cases and covers for hand-held personal electronic devices; cases and covers for mobile, notebook, and laptop computers;I PONCHO;
THE BLACK EYE PATCH ANCHOR Co., Ltd. 10 Anson Road #05-17 International Plaza Singapore 079 Singapore Cases and covers for cell phones; sunglasses;Bags, namely, all-purpose carrying bags and backpacks, travelling bags; wallets; credit card cases; key cases; business card cases;Stickers; printed matter, namely, books, newsletter, curricula, information cards and brochures in the field of fashion; paintings and their reproductions; paper and cardboard;Ornamental novelty pins, not of precious metal; ornamental adhesive patches for jackets; buttons;Clothing, namely, coats, jackets, suits, sweaters, vests, cardigans, shirts, polo shirts, sweat shirts, dress shirts, blouses, t-shirts, tunics, pullovers, ponchos, pants, skirts, dresses; socks; clothing, namely, gloves; neckties; bandanas; mufflers in the nature of neck scarves; headwear, namely, hats, caps; belts for clothing; shoes and boots, namely, training shoes, overshoes, canvas shoes, work shoes, sandals, half-boots, lace boots, rain boots and leather boots;Color is not claimed as a feature of the mark.;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film is interposed between the gate and the PEOX film in the main chip region.