CHANNEL MAX

Brand Owner (click to sort) Address Description
CHANNELMAX CARDIODYNE, INC. 2801 Barranca Road Irvine CA 92619 CHANNEL MAX;cardiovascular apparatus, namely, fiber optic delivery devices for transmitting laser energy;
CHANNELMAX ChannelMax, Inc. 6 Logue Court Greenville SC 29615 CHANNEL MAX;Logistics management in the field of specialty technology products, and on-line order fulfillment services;
CHANNELMAX ScanSource, Inc. 6 Logue Court Greenville SC 29615 CHANNEL MAX;Distributorship services in the fields of automatic identification and data capture products, business telephone equipment, telephony products and computer telephony integration products, converged communications products, and security products, namely, surveillance equipment, namely, cctv cameras, digital video recorders and camera lenses; access control equipment, namely, electromagnetic locks; intrusion alarm equipment, namely, transceivers; and general security system accessories, namely, sirens transformers, power supplies and batteries;Computer services, namely, creating and maintaining web sites for others;
 

Where the owner name is not linked, that owner no longer owns the brand

   
Technical Examples
  1. A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor ("IGFET") (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. Alternatively or additionally, the channel-junction IGFET may conduct current through a field-induced surface channel. A p-channel surface-channel IGFET (102 or 162), which is typically of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.