CHEMICAL COMPOSITIONS REMOVAL

Brand Owner (click to sort) Address Description
BIOHAZE BIOSCREEN PRODUCTS INC. 255-E Chemin du Tremblay Boucherville, Quebec K1Z 8R7 Canada chemical compositions for the removal of haze in the silkscreening process;
HDA EKC Technology, Inc. 2520 Barrington Court Hayward CA 945451163 chemical compositions for removal of photoresist and post etch residues in the manufacture of semiconductors and related products;
HDA DUPONT ELECTRONICS, INC. 974 CENTRE ROAD WILMINGTON DE 19805 chemical compositions for removal of photoresist and post etch residues in the manufacture of semiconductors and related products;
NANO-STRIP CMC MATERIALS, INC. 870 N. Commons Drive Aurora IL 60504 Chemical compositions for removal of photoresist and post etch residues in the manufacture of semiconductors, integrated circuits and related products;
NANO-STRIP Cyantek Corporation 3055 Osgood Court Fremont CA 94539 Chemical compositions for removal of photoresist and post etch residues in the manufacture of semiconductors, integrated circuits and related products;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. The present invention provides a method for fabricating low-resistance, sub-0.1 ?m channel T-gate MOSFETs that do not exhibit any poly depletion problems. The inventive method employs a damascene-gate processing step and a chemical oxide removal etch to fabricate such MOSFETs. The chemical oxide removal may be performed in a vapor containing HF and NH3 or a plasma containing HF and NH3.