CLEAN ROOM INSTALLATIONS

Brand Owner (click to sort) Address Description
INSTANT CLEANROOM Davis Verheyen US-IRV-CLINT325 Costa Mesa CA 92626 Clean room installations; Clean rooms;CLEANROOM;
INSTANT CLEANROOM Parker Abercrombie US-IRV-CLINT325 Costa Mesa CA 92626 Clean room installations; Clean rooms;CLEANROOM;
JHGHRY Shenzhen wandinghui Automobile Service Co., Ltd. 510, Dongfang Jianfu building, Ziyou Road, district 47, Xin'an street, Bao'an District, Shenzhen 518000 China Clean room installations; Disposable sterilization pouches, not for medical use; Electric lighting fixtures; Electrically-heated lunch boxes; Electromagnetic induction cookers; Fruit roasters; LED candles; LED landscape lights; LED light apparatus that clips on to a handbag, used to illuminate a handbag; LED lighting systems, namely, LED modules, power supplies, and wiring; LED underwater lights; Light Emitting Diode (LED) plant grow light; Outdoor lighted Christmas-themed ornaments; Portable showers; Portable wood pellet grills;
KIORUOLA Lu, Xiaoxia No. 1 shangci, Wenshan Village Lingdi Township Zhangping, Fujian 364400 China Clean room installations; Kimchi refrigerators; Lamps for festive decoration; Lamps for outdoor use; LED landscape lights; LED lighting fixtures for indoor and outdoor lighting applications; LED mood lights; Lighted outdoor holiday sculptures and wire frame statues; Lighting fixtures; Lights, electric, for Christmas trees; Mobile light towers; Pocket search lights; Portable showers; Solar-powered all-weather lights; Street lamps;
 

Where the owner name is not linked, that owner no longer owns the brand

   
Technical Examples
  1. Contamination of an interface of respective films constituting a TFT due to an contaminant impurity in a clean room atmosphere becomes a great factor to lower the reliability of the TFT. Besides, when an impurity is added to a crystalline semiconductor film, its crystal structure is broken. By using an apparatus for manufacturing a semiconductor device including a plurality of treatment chambers, a treatment can be made without being exposed to a clean room atmosphere in an interval between respective treatment steps, and it becomes possible to keep the interface of the respective films constituting the TFT clean. Besides, by carrying out crystallization after an impurity is added to an amorphous semiconductor film, the breakdown of the crystal structure of the crystalline semiconductor film is prevented.