CLEANING POLISHING PREPARATION

Brand Owner (click to sort) Address Description
CAR DETAILER POWER SERVICE PRODUCTS, INC. P.O. Box 1089 Weatherford TX 760861089 CLEANING AND POLISHING PREPARATION;
CARBONA CARBONA PRODUCTS COMPANY 330 CALYER ST. BROOKLYN NY 11222 CLEANING AND POLISHING PREPARATION;
CARBONA MARSHALL CHEMICAL COMPANY MARSHALL VA CLEANING AND POLISHING PREPARATION;
CHAMPIONS CHOICE PROTECT ALL DOES IT ALL! THETFORD CORPORATION 7101 Jackson Road Ann Arbor MI 48103 cleaning and polishing preparation for vinyl, leather, rubber, painted surfaces, glass fiber materials and chrome plated surfaces;
DELUXE SHINE CASTLE PRODUCTS, INC. 222 South Fifth St. Elkhart IN 46516 Cleaning and polishing preparation for all-purpose use on vinyl, leather, rubber and wood surfaces;SHINE;
SAY GOODBYE TO FINGERPRINTS R. S. Werner, Inc. 904 8th Street Anacortes WA 98221 cleaning and polishing preparation for furniture;
TEE TIME Blue Magic, Inc. 3327 PIPELINE ROAD CLEBURNE TX 76033 cleaning and polishing preparation for golf clubs; cleaning and restoring preparation for golf grips; cleaning and whitening preparation for golf shoes; leather and vinyl conditioning preparation; waterproofing and conditioning preparation for umbrellas, clothing and shoes;The stippling is a feature of the mark and does not indicate color.;
TOP GUARD Twi-Laq Industries, Inc. 1345 Seneca Avenue Bronx NY 10474 cleaning and polishing preparation for the maintenance of an acrylic hard floor finish, and other surfaces; namely, bathrooms; vinyl tile; household fixtures; wall covering; rugs and automobiles;
TOP GUARD MARCHE IMAGE CORPORATION PO BOX 1010 BRONZVILLE NY 10708 cleaning and polishing preparation for the maintenance of an acrylic hard floor finish, and other surfaces; namely, bathrooms; vinyl tile; household fixtures; wall covering; rugs and automobiles;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.