COVERS CASES CELL

Brand Owner (click to sort) Address Description
ACCENT BFREE (US) 1990 Main Street, Suite 750 Sarasota FL 34236 covers and cases for cell phones; covers and cases for electronic devices;
AQUA BFREE (US) 1990 Main Street, Suite 750 Sarasota FL 34236 covers and cases for cell phones; covers and cases for electronic devices;
DREAMERS4SUCCESS Dreamers4success Inc. 23 De L'Alcazar Street Blainville, Quebec J7B1R4 Canada Covers and cases for cell phones, tablets, computers, and portable electronic devices;Stickers; Posters; Wall murals;Clothing for women, men and kids, namely, t-shirts, sweaters, long sleeve t-shirts, tank tops, hooded sweatshirts, polos, raglan baseball tees, aprons, pants, underwear, jackets, caps, and shoes;DREAMERS FOR SUCCESS;
PLENTY BY TRACY REESE TRD HOLDINGS 19th Floor 260 West 39th Street New York NY 10018 covers and cases for cell phones, smart phones, tablet computers, laptop computers, compact video cameras, electronic book readers, mobile media players, eye glasses, eye glasses cases, sun glasses, sun glasses cases;The name(s), portrait(s), and/or signature(s) shown in the mark identifies TRACY REESE, whose consent(s) to register is made of record.;
PUTTING NATURE BACK INTO PEOPLE'S LIVES Workbench Studios 610 9th Street SE Minneapolis MN 55414 covers and cases for cell phones, laptops, tablet computers, headphones, portable computers, portable media players and electronic journals;
WOODCHUCK THE WORLD Workbench Studios 610 9th Street SE Minneapolis MN 55414 covers and cases for cell phones, laptops, tablet computers, headphones, portable computers, portable media players and electronic journals;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film is interposed between the gate and the PEOX film in the main chip region.