CUSTOM MANUFACTURE SILICON SEMICONDUCTOR

Brand	Owner (click to sort)	Address	Description
CYBER FAB	WORLDWIDE SEMICONDUCTOR MANUFACTURING CORP.	No. 25, Li-Hsin Rd. Science-Based Industrial Park Hsinchu Taiwan	CUSTOM MANUFACTURE OF SILICON SEMICONDUCTOR WAFERS AND INTEGRATED CIRCUITS;CYBER FAB;
YOUR AGILE FOUNDRY PARTNER	WORLDWIDE SEMICONDUCTOR MANUFACTURING CORP.	No. 25, Li-Hsin Rd. Science-Based Industrial Park Hsinchu Taiwan	CUSTOM MANUFACTURE OF SILICON SEMICONDUCTOR WAFERS AND INTEGRATED CIRCUITS;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

A first semiconductor structure has a silicon substrate, a first silicon germanium layer grown on the silicon, a second silicon germanium layer on the first silicon germanium layer, and a strained silicon layer on the second silicon germanium layer. A second semiconductor structure has a silicon substrate and an insulating top layer. The silicon layer of the first semiconductor structure is bonded to the insulator layer to form a third semiconductor structure. The second silicon germanium layer is cut to separate most of the first semiconductor structure from the third semiconductor structure. The silicon germanium layer is removed to expose the strained silicon layer where transistors are subsequently formed, which is then the only layer remaining from the first semiconductor structure. The transistors are oriented along the <100> direction and at a 45 degree angle to the <100> direction of the base silicon layer of the second silicon.