DINNERWARE COMPOSED STONEWARE

Brand Owner (click to sort) Address Description
ENGLISH COUNTRYSIDE LIFETIME BRANDS, INC. 1000 Stewart Avenue Garden City NY 11530 dinnerware composed of stoneware, namely plates, cups, saucers, platters, casseroles, tureens, sugar servers and creamers, salt and pepper shakers, gravy boats, mugs, and coffee and tea servers;ENGLISH;
ITALIAN COUNTRYSIDE MIKASA LICENSING, INC. One Mikasa Drive Secaucus NJ 070961549 Dinnerware composed of stoneware, porcelain and bone china; [ cooking utensils and tableware, namely, pots, pans, skillets,] casseroles [ and kettles,] platters, plates, canisters, bowls, creamers, cups and saucers, mugs, baking dishes, [ thermal beverage containers, carafes,] servers, gravy boat dishes, covered butter dishes, [ serving and mixing spoons, ] [ ladles, cutting boards,] salt and pepper shakers, napkin holders, and pitchers; [ spice racks; bread boxes, kitchen containers not of precious metal; giftware and objects of art made of ceramic material, porcelain, china, glass or wood, namely, figurines,] [ vases, ] bowls, [, planters, decanters,] pitchers [, coasters, chargers, and candlesticks ];ITALIAN;
MAISON BLANCHE MIKASA LICENSING, INC. One Mikasa Drive Secaucus NJ 070961549 dinnerware composed of stoneware, porcelain, and bone china; namely, plates, cups, saucers, bowls, platters, gravy boats, casseroles, sugar and creamers, salt and pepper shakers, mugs, and coffee and tea servers;MAISON BLANCHE may be translated from the French as white house.;
MAXIMA MIKASA LICENSING, INC. One Mikasa Drive Secaucus NJ 070961549 DINNERWARE COMPOSED OF STONEWARE, PORCELAIN AND BONE CHINA;
WHITE SILK AMERICAN COMMERCIAL, INCORPORATED 20633 South Fordyce Avenue Carson CA 90749 dinnerware composed of stoneware, porcelain and bone china;WHITE;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.