EARTH WARE

Brand Owner (click to sort) Address Description
EARTH&WARE SKYARC 13502 Whittier Blvd STE H105 Whittier CA 90605 EARTH AND WARE;Clay pots; pots;
EARTHWARE WHAT'S HAPPENING, INC. 33051-D CALLE AVIADOR SAN JUAN CAPISTRANO CA 92672 EARTH WARE;CLOTHING, NAMELY, TOPS, SHIRTS, AND BLOUSES;
EARTHWARE Earthpure Organics Suite 101 107 East 46th Street Garden City ID 83714 EARTH WARE;Promoting public awareness of the need to lead a bio-sustainable and environmentally friendly, healthy lifestyle, use existing environmentally friendly bio-sustainable packaging technologies, and use carbon offsets in the food production marketplace;
EARTHWARE BIEN Co., Ltd. 1389-2, Imbe, Bizen-shi; Okayama 705-0001 Japan EARTH WARE;Color is not claimed as a feature of the mark.;Advertising and publicity services; retail services or wholesale services featuring earthenware dishware; retail services or wholesale services featuring earthenware flower vases, earthenware holders for flowers and plants;EARTHWARE;
EARTHWARE Erwyn Products Co. Inc. 1240 Campus Drive West Morganville NJ 07751 EARTH WARE;Chemical and plant-based preparations for use in the manufacture of household items;
EARTHWARE Erwyn Products Co., Inc. 1240 Campus Drive West Morganville NJ 07751 EARTH WARE;plant-based preparations, namely, polylactic acid for use in the manufacture of household items, namely, soap dishes, amenity trays, tissue boxes, wastebaskets, lotion pumps, ice buckets, and toothbrush holders;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.