ELECTRONIC SEMICONDUCTOR CHIP COMPONENTS

Brand Owner Address Description
YAGEO YAGEO CORPORATION 3F., NO.233-1, 3F., NO.233-2 PAO-CHIAO RD., XINDIAN DIST. NEW TAIPEI CITY Taiwan Electronic semiconductor chip components in the nature of resistors; electric resistors for telecommunication apparatus; resistors for distributing or controlling electric current; high voltage measuring resistor; electrical signal attenuators; monolithic ceramic capacitors; capacitors; electrolytic capacitor; aerials; antenna filters; induction capacitance filters used in electrical applications; electrical inductors; power inductors; signal coupler; antennas for wireless communications apparatus; electric resistors; gas discharge tubes, other than for lighting applications; diode; fuse wire; electronic components in the nature of transistors; discharge tubes, electric, other than for lighting; voltage surge suppressors; varistor; rheostats; ceramic surge suppressor; transient voltage suppressors; voltage surge protectors; thermistors; electric sensors;The wording YAGEO has no meaning in a foreign language.;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A semiconductor device that exhibits an enhanced inhibition to a generation of voids in an underfill resin for encapsulation supplied between a semiconductor chip and an electronic component, which are mutually coupled through bump electrodes. The semiconductor device includes a first semiconductor chip and a second semiconductor chip, wherein bumps-formed surface of the first semiconductor chip is opposed to bumps-formed surface of the electronic component. The semiconductor device includes insulating films that function as protective films respectively formed on an uppermost surface of the first semiconductor chip and on an uppermost surface of the electronic component. Openings for supplying an underfill resin between the first semiconductor chip and the second semiconductor chip are provided in the vicinity of the bumps-formed regions of at least one of the insulating films.