FIBER COPPER PHYSICAL LAYER

Brand Owner Address Description
INTELLIGENT CONNECTION IDENTIFICATION Fiber Mountain, Inc. 700 W. Johnson Avenue Cheshire CT 06410 Fiber and copper physical layer infrastructure equipment, product, and system intelligence for software defined networking systems, namely, fiber-optic cables and electrical copper cables for use in communication networks including data centers, carrier, enterprise and federal communication networks; telecommunications switches, namely, network pathway controlling devices with cable identifying connector technology; computer network switches with cable identifying connector technology; high density computer network switches with cable identifying connector technology; active and passive cross-connects being fiber-optic cables and electrical copper cables for use in communication networks with cable identifying connector technology; patch panels, namely, panels supporting networking ports for optical and electrical cable with cable identifying connector technology, network routers with cable identifying connector technology, active interconnector adaptors to terminate fiber and active interconnector adaptors to terminate multifiber cables for high bandwidth data transmission; Network Interface Cards embedded in servers and storages devices having cable identifying connector technology;CONNECTION IDENTIFICATION;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method of forming a copper interconnect in an opening within a pattern is described. The copper interconnect has an Rs that is nearly independent of opening width and pattern density. A first copper layer having a concave upper surface and thickness t1 is formed in a via or trench in a dielectric layer by depositing copper and performing a first CMP step. A second copper layer with a thickness t2 where t2?t1 and having a convex lower surface is deposited on the first copper layer by a selective electroplating method. The first and second copper layers are annealed and then a second CMP step planarizes the second copper layer to become coplanar with the dielectric layer. The invention is also a copper interconnect comprised of the aforementioned copper layers where the first copper layer has a grain density (GD1)?GD2 for the second copper layer.