FORTY FABULOUS

Brand Owner (click to sort) Address Description
40 & FABULOUS 31st & Seventh Media 615 Aberdeen Street DAYTONA BEACH FL 32114 FORTY AND FABULOUS;Athletic apparel, namely, shirts, pants, jackets, footwear, hats and caps, athletic uniforms; Athletic tops and bottoms for running, swimming, indoor and outdoor fitness; Bathing suits; Belts for clothing; Body suits; Business wear, namely, suits, jackets, trousers, blazers, blouses, shirts, skirts, dresses and footwear;
40 & FABULOUS The Sterling James Company 4786 Guernsey Loop Castle Rock CO 80109 FORTY AND FABULOUS;Coffee mugs; Drinking glasses; Drinking straws; Insulating sleeve holders for beverage cans; Paper plates; Plastic cups; Shot glasses;
40 & FABULOUS Paris Products Co. 3010 Brighton Sky Ln. Katy TX 77494 FORTY AND FABULOUS;Bottles, sold empty; Containers for household use; Drinking glasses, namely, tumblers; Household containers for foods; Jugs; Mugs; Non-electric Portable beverage coolers; Wine aerators; Wine jugs; Wine pourers; Wine strainers; Wine tasters; Cups; Dinnerware; Drinking bottles for sports; Drinking straws; Kitchen containers; Oven mitts; Rags for cleaning; Thermal insulated bags for food or beverages; Trays for domestic purposes; Water bottles sold empty; Washing brushes; coasters not of paper or textile; Insulating sleeve holders for beverage cans; Cocktail shakers; flasks; ice buckets; shot glasses;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A system and method is disclosed for selectively increasing a wet etch rate of a large raised area portion of a semiconductor wafer with respect to a wet etch rate of a small raised area portion of the semiconductor wafer. A resist mask on the semiconductor wafer is etched to create a large via over the large raised area portion and a small via over the small raised area portion. An ion implantation beam is applied with an impact direction that enables ions to pass through the large via but does not enable ions to pass through the small via. The ions that pass through the large via increase the wet etch rate of the underlying portion of the semiconductor wafer. In one embodiment the impact direction has a tilt angle of forty five degrees and a rotation angle of forty five degrees.