FORTY FIVE

Brand Owner (click to sort) Address Description
45 ONE WORLD VENTURES 512 Via de la Valle, Suite 310 Solana Beach CA 92075 FORTY FIVE;Restaurant, bar, catering, and carry-out restaurant services; providing facilities for cooking demonstrations, cooking exhibitions, and other functions; providing private lunch and dinner events where participants sample meals and drinks; rental of banquet and social function facilities for special occasions, namely, for social events, get-togethers and private parties and events; restaurant and bar services, namely, providing private members dining and drinking services;
45* Ciara Entertainment Suite 383 4876-118 Princess Anne Road Virginia Beach VA 23462 FORTY FIVE;Hats; T-shirts;
FORTI-5 RA-PID-GRO CORPORATION 555 MARKET ST. SAN FRANCISCO CA 94105 45;FORTY-FIVE;FORTIFY;PLANT MICRO-NUTRIENTS SOLD AS A COMPONENT OF PLANT FOOD;
FORTI5 RWI Resources P.O. Box 72800 Marietta GA 30007 FORTY FIVE;BEVERAGES, NAMELY, FLAVORED AND NON-FLAVORED SPARKLING WATER AND SPRING WATER; CAFFEINATED AND NON-CAFFEINATED DRINKS, NAMELY, SOFT DRINKS WITH OR WITHOUT FRUIT FLAVORING; SMOOTHIES; CAFFEINATED AND NON-CAFFEINATED TEA; JUICES; AND NON-ALCOHOLIC BEVERAGES;
FORTY5 Emissive Energy Corporation 135 Circuit Drive North Kingstown RI 02852 FORTY FIVE;Firearm attachments, namely, mounts for attaching lights to a firearm;Flashlights; Tactical flashlights;
FORTYFIVE FLOS S.P.A. Via Angelo Faini 2 Bovezzo (Brescia) 25073 Italy FORTY FIVE;Apparatus for lighting;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A system and method is disclosed for selectively increasing a wet etch rate of a large raised area portion of a semiconductor wafer with respect to a wet etch rate of a small raised area portion of the semiconductor wafer. A resist mask on the semiconductor wafer is etched to create a large via over the large raised area portion and a small via over the small raised area portion. An ion implantation beam is applied with an impact direction that enables ions to pass through the large via but does not enable ions to pass through the small via. The ions that pass through the large via increase the wet etch rate of the underlying portion of the semiconductor wafer. In one embodiment the impact direction has a tilt angle of forty five degrees and a rotation angle of forty five degrees.