HI RISE

Brand Owner (click to sort) Address Description
HI-RISE COMPONENT HARDWARE GROUP, INC. 1890 Swarthmore Avenue Lakewood NJ 08701 HI RISE;Furniture accessories, namely adjustable bullet foot inserts for furniture legs;
HI-RISE CATSCARA INC 134 N 4th Street Brooklyn NY 11249 HI RISE; HIGH RISE;Lipstick;
HI-RYSE AMYRIS, INC. 5885 Hollis Street, Suite 100 Emeryville CA 94608 HI RISE; HIGH RISE;Molecular biology services, namely, performing genomic modifications and installing and optimizing biosynthetic pathways in host cells to create, validate, scale-up and commercialize biotechnology products using tools comprised of molecular biology reagents, consisting primarily of enzymes and nucleic acid molecules;
HIRISE Dovetail Genomics 100 Enterprise Way, Suite A101 Scotts Valley CA 95066 HI RISE;providing temporary use of non-downloadable software for use in research of agriculture; providing temporary use of non-downloadable software for use in gene analysis and sequencing as well as DNA analysis and sequencing;
HIRISE CurveBeam Suite 110 2800 Bronze Drive Hatfield PA 19440 HI RISE;Medical apparatus and instruments for imaging, namely, computed tomography (CT) imaging apparatus, x-ray imaging apparatus; radiological apparatus for diagnostic and medical purposes, namely, computed tomography (CT) imager; medical equipment, namely, computed tomography (CT) apparatus; X-ray scanners for use in medical imaging; medical imaging devices, namely, compact cone beam computed tomography devices for 3-D imaging; medical apparatus and instruments for imaging, namely, computed tomography (CT) imaging apparatus, x-ray imaging apparatus for imaging of the feet, hips and rotatable for the hand and elbow;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method for accounting for negative bias temperature instability in a rise delay of a circuit design, the method comprising the steps of create a cell and net model library with original rise numbers, construct the circuit design from the cell and net models, for each cell and net in the circuit design, calculate an original rise delay, apply a negative bias temperature instability model to determine a parameter shift, determine a new rise number from the parameter shift, and calculate a new rise delay by original rise delay* (original rise number)/(new rise number).