HIGH FREQUENCY POWER SUPPLY APPARATUS

Brand Owner (click to sort) Address Description
CQM OLYMPUS AMERICA INC. 2951 Ishikawa-machi, Hachioji-shi TOKYO 192-8507 Japan high frequency power supply apparatus for electrosurgical instruments;
CQM OLYMPUS CORPORATION 2951 Ishikawa-machi, Hachioji-shi, Tokyo 192-8507 Japan HIGH FREQUENCY POWER SUPPLY APPARATUS FOR ELECTROSURGICAL INSTRUMENTS;
PSD OLYMPUS CORPORATION 2951 Ishikawa-machi, Hachioji-shi, Tokyo 192-8507 Japan HIGH FREQUENCY POWER SUPPLY APPARATUS FOR ELECTROSURGICAL INSTRUMENTS;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.