LOW PRESSURE CHEMICAL VAPOR DEPOSITION

Brand Owner Address Description
EUREKA Jusung Engineering Co., Ltd. 240, Opo-ro, Opo-eup, Gwangju-si Gyeonggi-do 12773 Republic of Korea Low pressure chemical vapor deposition device; diffusion furnace; plasma enhanced chemical vapor deposition device; metal organic chemical vapor deposition devices- rapid thermal chemical vapor deposition device; high temperature chemical vapor deposition device; vapor phase epitaxy device; liquid phase epitaxy device; atmospheric pressure chemical vapor deposition device; semi-atmospheric chemical vapor deposition device,;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A chemical vapor deposition process for laying down a gallium oxide coating on a glass substrate through the use of an organic ester and an inorganic gallium halide. The organic ester preferably contains 3-6 carbon atoms which contributes to obtaining a high deposition rate. The chemical vapor deposition method to form the gallium oxide coating is preferably at, essentially, atmospheric pressure. The resulting article has a gallium oxide coating which can be of substantial thickness because of the high deposition rates attainable. The coating deposition rates resulting from the method of the present invention are preferably greater than or equal to 75 ? per second.