NON ABRASIVE POLISHING PADS CHEMICAL MECHANICAL

Brand Owner (click to sort) Address Description
CMC MATERIALS CMC MATERIALS, INC. 870 N. Commons Drive Aurora IL 60504 Non-abrasive polishing pads for chemical-mechanical planarizing or chemical mechanical polishing (cmp) machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads for polishing machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets; Polishing pads for use in the manufacture of advanced integrated circuit devices within the semiconductor industry;Industrial lubricants, namely, valve lubricants for the oil and gas storage, pipeline and gas distribution markets; Industrial lubricants and greases;CABOT MICROELECTRONICS CORPORATION MATERIALS;Industrial abrasives, namely, abrasive compounds for lapping and polishing semiconductors, silicon wafers, glass and metal surfaces; Chemical cleaner directed to the electronics industry; Post-copper chemical mechanical planarization (cmp) cleaning solution for use in the manufacturing and processing of semiconductors; Chemical cleaning solution for processing of integrated circuit (ic) in the opto-electronics and photonics industries; Post-ash cleaning solution for use in the manufacturing and processing of semiconductors; Abrasive preparations, namely, chemical cleaners, namely, abrasive dispersion slurries and cleaning and polishing preparations for use in the finishing of electronic components and substrates, optical components, glass, metals, plastics, machinery, computer parts, magnetic data-storage disks and heads;Chemical slurry for polishing semiconductors; Chemical slurries for polishing semiconductors, silicon wafers, glass, metals, plastics, machinery, electronic components and substrates, optical components, computer parts, magnetic data-storage disks and heads for use in the semiconductor, electronic, rigid disk and magnetic head industries; Chemical slurries for polishing semiconductors used for the treatment of semiconductors to planarize, smooth, or otherwise modify their chemical-mechanical properties; Chemical slurries for polishing semiconductors used for the treatment of semiconductors to planarize, smooth or otherwise modify their mechanical, physical, chemical and electrical properties; Chemical solutions for use in the manufacturing and processing of semiconductors, namely, photoresist stripper, benzotriazole (BTA) and L-proline solution; Fumed silica dispensed in water used to polish semiconductors; Aqueous metal oxide dispersions for use in semiconductor polishing; Chemical additives, namely, abrasive dispersions for use in the manufacture of electronic components and substrates, optical components, metals, machinery, computer parts, and magnetic data-storage disks and heads; Chemical slurries for use in the manufacture of advanced integrated circuit devices within the semi-conductor industry; High purity chemical compositions for electronic component manufacture; Chemical compositions for use in semiconductor manufacturing, solar cell panel manufacturing and flat panel display manufacturing; Chemical compositions for removal of photoresist and post-etch residues in the manufacture of semiconductors, integrated circuits and related products; Chemicals for use in industry and science; Chemical preparations for use in industry and science, namely, for use in the semiconductor and micro-electronics industries; Chemicals, namely, polymer-containing drag reducers and flow improvers to increase flow of hydrocarbons through pipelines; Chemical mechanical polishing (cmp) slurry and chemical mechanical planarization (cmp) slurry for use in the manufacturing and processing of semiconductors in the optoelectronics and photonics industries;MATERIALS;
ELEMENT Cabot Microelectronics Corporation 870 North Commons Drive Aurora IL 60504 non-abrasive polishing pads for chemical-mechanical planarizing or chemical-mechanical polishing (CMP) machines for use in the manufacture of semiconductor wafers, integrated circuits, hard disk drives and chipsets;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.