NON LINEAR ELECTRIC RESISTORS VARISTORS

Brand Owner Address Description
M&I MATERIALS M & I Materials Limited Hibernia Way, Trafford Park Manchester M320ZD United Kingdom Non-linear electric resistors and varistors composed mainly of ball clay, silicon carbide and graphite;Common metals and their alloys; materials of metal for railway tracks construction; non-electric cables and wires of common metal; ironmongery, namely, boring bars in the nature of metal drill pipes for use in well boring; small items of metal hardware, namely, boring bars in the nature of metal drill pipes for use in well boring; pipes and tubes of metal; metal ores; unwrought and partly wrought common metals, all of the aforesaid being wholly or principally tungsten or alloys of tungsten;Insulating materials; transformer fluids in the nature of transformer oil; insulating oil for transformers; dielectric liquids consisting of esters and of modified hydrocarbons for the purpose of insulation to prevent short circuits and arcing in a transformer and also act as a heat transfer medium;Industrial oils and greases; lubricants, namely, all purpose lubricants, lubricants for industrial machinery and industrial lubricants; dust absorbing and binding compositions; combustible fuels; and scented candles;M AND I MATERIALS;MATERIALS;
 

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Technical Examples
  1. Analog control integrated FET based variable resistors and attenuators using the variable resistors having a wide range of monotonic and substantially linear attenuation with control voltage for use in circuits having AC signals of AC signal frequencies. The variable resistors comprise field effect devices (FETs) biased to operate in their linear region and having their bodies and gates coupled to a reference voltage and a control voltage, respectively, through impedances, typically resistors, having impedances that are higher than the impedances of parasitic capacitances at the signal frequencies. This allows the body and gate of each FET to vary in voltage with the signal to maintain the bias of the FETs in the presence of large signals. Various embodiments are disclosed.