PLANTS FOR THERMAL TREATMENT

Brand Owner (click to sort) Address Description
PLASMABLAST SKF STEEL ENGINEERING AB BOX 202 HOFORS Sweden PLANTS FOR THERMAL TREATMENT OF METAL ORES, COMPRISING SHAFT FURNACES; MELTING FURNACES; HEATERS; BURNERS, NAMELY, PLASMAGENERATORS; CONVERTERS, COOLING ELEMENTS; REACTORS; AND MIXING AND COMBUSTION CHAMBERS;
PLASMACHROME SKF STEEL ENGINEERING AB BOX 202 HOFORS Sweden PLANTS FOR THERMAL TREATMENT OF METAL ORES, COMPRISING SHAFT FURNACES; MELTING FURNACES; HEATERS; BURNERS, NAMELY, PLASMAGENERATORS; CONVERTERS, COOLING ELEMENTS; REACTORS; AND MIXING AND COMBUSTION CHAMBERS;
PLASMADUST SKF STEEL ENGINEERING AB BOX 202 HOFORS Sweden PLANTS FOR THERMAL TREATMENT OF METEL ORES, COMPRISING SHAFT FURNACES; MELTING FURNACES; HEATERS; BURNERS, NAMELY, PLASMAGENERATORS; CONVERTORS; COOLING ELEMENTS; REACTORS; AND MIXING AND COMBUSTION CHAMBERS;
PLASMARED AKTIEBOLAGET SKF HORNSGATAN 1 GÖTEBORG 415 50 Sweden Plants for Thermal Treatment of Iron Ores, Comprising Melting Furnaces, Heaters, Burners Including Plasmagenerators, Converters, Cooling Elements, Reactors, Mixing Vessels, Mixing Chambers, Burning Chambers;
PLASMASMELT AKTIEBOLAGET SKF HORNSGATAN 1 GÖTEBORG 415 50 Sweden PLANTS FOR THERMAL TREATMENT OF IRON ORES, COMPRISING MELTING FURNACES, HEATERS, BURNERS NAMELY, PLASMAGENERATORS, CONVERTERS, COOLING ELEMENTS, REACTORS,MIXING VESSELS, MIXING CHAMBERS, BURNING CHAMBERS;
PLASMAZINC SKF STEEL ENGINEERING AKTIEBOLAG P.O. BOX 202 HOFORS Sweden PLANTS FOR THERMAL TREATMENT OF ZINC ORES, COMPRISING SHAFT FURNACES; MELTING FURNACES; HEATERS; BURNERS, NAMELY, PLASMAGENERATORS; CONVERTERS, COOLING ELEMENTS; REACTORS; AND MIXING AND COMBUSTION CHAMBERS;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents realization of faster transistors. An oxide film is exposed to a nitriding atmosphere to introduce nitrogen into the oxide film, and a thermal treatment process is performed in an oxidizing atmosphere. The thermal treatment process temperature in the oxidizing atmosphere is made equal to or higher than the maximum temperature in all the thermal treatment processes that are performed later than that thermal treatment process step.