POLYCRYSTAL OR SINGLE CRYSTAL SILICON

Brand Owner (click to sort) Address Description
ECMOS AMBERWAVE SYSTEMS CORPORATION 13 Garabedian Drive Salem NH 03079 POLYCRYSTAL OR SINGLE CRYSTAL SILICON IN THE FORM OF WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; SILICON EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; POLYCRYSTAL OR SINGLE CRYSTAL GROUP III-V COMPOUND IN THE FORM OF WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS OF GROUP III-V COMPOUND FOR SEMICONDUCTOR USE; GROUP IV MATERIALS OR ALLOYS IN THE FORM OF EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; ELECTRONIC AND OPTOELECTRONIC COMPOUND SEMICONDUCTOR MATERIALS, NAMELY EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS;TECHNICAL, SCIENTIFIC AND INDUSTRIAL RESEARCH, TECHNICAL PROJECT STUDIES, AND LICENSING OF INTELLECTUAL PROPERTY, ALL RELATED TO RESEARCH AND DEVELOPMENT OF SEMICONDUCTOR PROCESSES, MATERIALS, DEVICES AND CIRCUITS;
EPMOSFET AMBERWAVE SYSTEMS CORPORATION 13 Garabedian Drive Salem NH 03079 POLYCRYSTAL OR SINGLE CRYSTAL SILICON IN THE FORM OF WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; SILICON EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; POLYCRYSTAL OR SINGLE CRYSTAL GROUP-IIIV COMPOUND IN THE FORM OF WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; EPITAXIAL WAFER, CHIPS OR INTEGRATED CIRCUITS OF GROUP-IIIV COMPOUND FOR SEMICONDUCTOR USE; GROUP IV MATERIALS OR ALLOYS IN THE FORM OF EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS FOR SEMICONDUCTOR USE; ELECTRONIC AND OPTOELECTRONIC COMPOUND SEMICONDUCTOR MATERIALS, NAMELY EPITAXIAL WAFERS, CHIPS OR INTEGRATED CIRCUITS;TECHNICAL, SCIENTIFIC AND INDUSTRIAL RESEARCH, TECHNICAL PROJECT STUDIES, AND LICENSING OF INTELLECTUAL PROPERTY, ALL RELATED TO RESEARCH AND DEVELOPMENT AND SEMICONDUCTOR PROCESSES, MATERIALS, DEVICES AND CIRCUITS;
 

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Technical Examples
  1. An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.