REACTIVE STRESS ELIMINATION TECHNIQUE RESET

Brand	Owner	Address	Description
REACTIVE STRESS ELIMINATION TECHNIQUE (RE.S.E.T.)	Baune, Donald J.	25409 Narbonne Ave Lomita CA 90717	REACTIVE STRESS ELIMINATION TECHNIQUE (RESET);Health care services, namely, wellness programs;STRESS ELIMINATION;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.