RELIEVE

Brand Owner (click to sort) Address Description
AMRELIEVE Brandt Digital Ltd Unit 2, 17-19 Blackwater St London SE228SD United Kingdom AM RELIEVE;(Based on Use in Commerce) Compression sleeves; Compression socks for medical or therapeutic use; Orthopaedic insoles; Orthopedic belts(Based on 44(d) Priority Application) Compression sleeves; Compression socks for medical or therapeutic use; Orthopaedic insoles; Orthopedic belts;
AMRELIEVE Brandt Digital Ltd Unit 2, 17-19 Blackwater St London SE228SD United Kingdom AM RELIEVE;(Based on Use in Commerce) On-line retail store services featuring health and well-being products(Based on 44(d) Priority Application) On-line retail store services featuring health and well-being products;
CANRELIEVE CanRelieve Suite 302 1501 Hamburg Turnpike Wayne NJ 07470 CAN RELIEVE;Retail store services featuring non-medicinal herbal extracts; Wholesale store services featuring non-medicinal herbal extracts;
RE-LEVE KENTUCKY EQUINE RESEARCH, INC. 3910 Delaney Ferry Road Versailles KY 40383 RELIEVE;HORSE FEED;
REALEVE REALEVE 2600 S. RANEY EFFINGHAM IL 62401 RELIEVE;medical device for the treatment of neurovascular diseases;
REALEVE UNITY HA 2600 S. Raney Effingham IL 62401 RELIEVE;medical device for the treatment of neurovascular diseases;
RELEEVE Neurotron Medical Inc. 800 Silvia Street West Trenton NJ 08628 RELIEVE;Electromedical rehabilitative and pain management products for clinical and home use, namely, electrical nerve and muscle stimulators [, ultrasonic stimulators, magnet therapy stimulators and laser therapy stimulators ];RELIEVE;
RELEV Nemschoff Chairs, Inc. 909 North 8th Street Sheboygan WI 530820129 RELIEVE;recliners;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method of forming a lattice-tuning semiconductor substrate comprises the steps of defining parallel strips of a Si surface by the provision of spaced parallel oxide walls (2) on the surface, selectively growing a first SiGe layer on the strips such that first dislocations (3) extend preferentially across the first SiGe layer between the walls (2) to relieve the strain in the first SiGe layer in directions transverse to the walls (2), and growing a second SiGe layer on top of the first SiGe layer to overgrow the walls (2) such that second dislocations form preferentially within the second SiGe layer above the walls (2) to relieve the strain in the second SiGe layer in directions transverse to the first dislocations (3). The dislocations so produced serve to relax the material in two mutually transverse directions whilst being spatially separated so that the two sets of dislocations cannot interact with one another. Thus the density of threading dislocations and the surface roughness is greatly reduced, thus enhancing the performance of the virtual substrate by decreasing the disruption of the atomic lattice that can lead to scattering of electrons in the active devices and degradation of the speed of movement of the electrons.