SEMICONDUCTOR SUBSTRATES WAFERS

Brand	Owner (click to sort)	Address	Description
ABSOLUTE ZERO	II-VI DELAWARE, INC.	Suite 1300 1105 North Market Street Wilmington DE 19801	Semiconductor substrates and wafers;
UNIBOND	S.O.I. TEC Silicon On Insulator Technologies SA	Parc Technologique des Fontaines 38190 BERNIN France	SEMICONDUCTOR SUBSTRATES AND WAFERS, FOR USE IN FLAT PANEL DISPLAYS, INTEGRATED OPTICAL WAVE GUIDES AND SENSORS; MICROMACHINERY COMPONENTS, NAMELY, MICRO ELECTRONIC MECHANICAL SYSTEMS COMPRISED OF MEMBRANES, POUTRES, TRANSISTORS, THERMOCOUPLES, OPTOGUIDES, CAVITIES, GAUGES, LENSES, ACCELEROMETERS, GUIDES, SENSORS, RESISTORS, SUSPENDED BRIDGES, MIRRORS, FOR USE IN THE MANUFACTURE OF INTEGRATED CIRCUITS;[ MICROMACHINERY COMPONENTS, NAMELY, MICRO ELECTRONIC MECHANICAL SYSTEMS COMPRISED OF GEARS, PUMPS, ENGINES AND MICRO-MOTORS, FOR USE IN THE MANUFACTURE OF INTEGRATED CIRCUITS ];
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer is located adjacent to the second semiconductor wafer. A relationship is provided between a plurality of values for an electrical characteristic and a plurality of materials. A material is chosen from the plurality of materials existing in the relationship. A substructure is formed comprising the material sandwiched between a topside of the first semiconductor wafer and a backside of a portion of the of the second semiconductor wafer. The plurality of semiconductor wafers are placed into a furnace comprising an elevated temperature for processing resulting in a value for the first semiconductor wafer of the electrical characteristic that corresponds to said material in said relationship.