SEMICONDUCTOR THIN FILM FABRICATION

Brand Owner (click to sort) Address Description
APEX 7000 Plasma & Materials Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication equipment; namely, plasma etching machines;
MORI 200 Plasma & Materials Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication machines; namely, plasma generators;
MORI 200 Plasma & Materials Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication machines; namely, plasma generators;
MORI MESC MODULE Plasma & Materials Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication equipment; namely, plasma etching machines;MESC MODULE;The English translation of the word MORI in the mark is woods or grove.;
PINNACLE 8000 Plasma & Materials Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication equipment; namely, plasma etching machines;
PINNACLE 8000R Trikon Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication equipment, namely plasma etching machines;In the statement, Column 1, before line 1, Trikon Technologies, Inc., (California Corporation), 9255 Deering Avenue, Chatsworth, CA 91311, by change of name from should be inserted.;
PMT Plasma & Materials Technologies, Inc. 9255 Deering Avenue Chatsworth CA 91311 semiconductor and thin film fabrication machines;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). Then, the crystalline semiconductor thin film (102) is subjected to a heat treatment at a temperature of 900 to 1200° C. in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.