SEMICONDUCTORS SEMICONDUCTOR DEVICES

Brand Owner (click to sort) Address Description
ANTITREX QUANTUMLOGIC SOLUTIONS, INC. 3824 Phoenix Street Ames IA 50014 Semiconductors and semiconductor devices;
DRIVISIO TECHNOLOGY NEC ELECTRONICS CORPORATION 1753, Shimonumabe, Nakahara-ku, Kawasaki Kanagawa Japan semiconductors and semiconductor devices; integrated circuits; display driver integrated circuits; liquid crystal display driving integrated circuits; integrated circuits for LCD controls and drivers; image processing chips; liquid crystal displays; microcomputers; computer memories;TECHNOLOGY;Research, development and design of semiconductor and semi-conductor devices, integrated circuits and display driver integrated circuits for others; development, design, programming and maintenance of computer software; technical consultation and advisory services relating to the design and development of semiconductor and semiconductor devices, integrated circuits and display driver integrated circuits;
ELPIDA NEC-Hitachi Memory, Inc. 2-2-1 Yaesu Chuo-ku Tokyo, 104-0028 Japan semiconductors and semiconductor devices, integrated circuits and electrical circuits;
ULTRALOGIC CYPRESS SEMICONDUCTOR CORPORATION 198 Champion Court San Jose CA 95134 semiconductors and semiconductor devices; computer software for use in the design, development, manufacture, testing and operation of semiconductors and integrated circuits;ULTRA LOGIC;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.