SILICON PLATES CHILDREN

Brand Owner (click to sort) Address Description
OSHO YO BISTRO 1013 CENTER ROAD SUITE 403-B WILMINGTON DE 19805 Silicon plates for children; Plastic place mats; silicon Place mats; Vinyl place mats; Place mats, not of paper or textile; Re-usable or disposable plastic or silicone valves sold for use with training cups for babies and children; Silicone cupcake baking liners; Silicone muffin baking liners; Silicone baking cups; Plastic cups; Paper cups; Plastic plates; Plastic coasters; Plastic freezer pop forms; Plastic juice box holders; Tablemats of plastic; Plastic water bottles sold empty; Plastic storage containers for domestic use; Plastic containers in the shape of fruits and vegetables for storing individual fruits and vegetables, and for extending the life of those fruits and vegetables;
OSHO Lev, Or 7 Ha'aliya Street Batsra 6094400 Israel Silicon plates for children; Plastic place mats; silicon Place mats; Vinyl place mats; Place mats, not of paper or textile; Re-usable or disposable plastic or silicone valves sold for use with training cups for babies and children; Silicone cupcake baking liners; Silicone muffin baking liners; Silicone baking cups; Plastic cups; Paper cups; Plastic plates; Plastic coasters; Plastic freezer pop forms; Plastic juice box holders; Tablemats of plastic; Plastic water bottles sold empty; Plastic storage containers for domestic use; Plastic containers in the shape of fruits and vegetables for storing individual fruits and vegetables, and for extending the life of those fruits and vegetables;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Silicon carbon is used as a diffusion barrier to germanium so that a silicon layer can be subsequently formed without being contaminated with germanium. This is useful in separating silicon layers from silicon germanium layers in situations in which both silicon and silicon germanium are desired to be present on the same semiconductor device such as for providing different materials for optimizing carrier mobility between N and P channel transistors and for a raised source/drain of silicon in the case of a silicon germanium body.