SINGLE RON

Brand	Owner (click to sort)	Address	Description
SINGLERON	SINGLERON (NANJING) BIOTECHNOLOGIES CO., LTD.	Building 6-5F, Accelerator Phase II, Yaogu Avenue 11, Jiangbei New Area, Nanjing, Jiangsu 210000 China	SINGLE RON;Nucleic acid sequencing programs in the nature of single cell analysis other than for medical use; nucleic acids for laboratory use; nucleic acids for scientific purposes; nucleic acid for use in nucleic acid amplification processes other than for medical use; nucleic acid amplification reagents other than for medical use; polymers for use in the analysis of nucleic acids; nucleic recombinant acids for laboratory use;Drug discovery services; development of pharmaceutical preparations and medicines; research and development in the field of biotechnology; research and development in the pharmaceutical; clinical research in the field of single cell analysis; biotechnology testing in the field of single cell analysis;
SINGLERON	Singleron Biotechnologies Ltd.	Yangzi Innovation Center Bldg. A. Fl. 10 Tuanjie Road 98, Pukou, Nanjing Jiangsu 210000 China	SINGLE RON;Nucleic acid sequencing programs in the nature of single cell analysis other than for medical use; nucleic acids for laboratory use; nucleic acids for scientific purposes; nucleic acid for use in nucleic acid amplification processes other than for medical use; nucleic acid amplification reagents other than for medical use; polymers for use in the analysis of nucleic acids; nucleic recombinant acids for laboratory use;Drug discovery services; development of pharmaceutical preparations and medicines; research and development in the field of biotechnology; research and development in the pharmaceutical; clinical research in the field of single cell analysis; biotechnology testing in the field of single cell analysis;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

A method of fabricating micro-chips, including: (a) providing a substrate; (b) forming a first single-crystal layer on a top surface of the substrate; (c) forming a second single-crystal layer on a top surface of the first single-crystal layer; (d) forming integrated circuits in the second single-crystal layer; (e) forming a set of intersecting trenches in the second-single crystal layer to form single-crystal islands, each single-crystal island containing one or more of the integrated circuits, the first single-crystal layer exposed in a bottom of the trench; and (f) removing the first single-crystal layer in order to separate the single-crystal islands from the substrate.