SOLID STATE MEMORY CARDS

Brand Owner (click to sort) Address Description
FLOPPYFLASH Hazani, Emanuel 1210 Sesame Drive Sunnyvale CA 94087 Solid State Memory cards for carrying data, and disk drives and adaptors that are capable to convert magnetic disk read/write information to electrical data which is readable and writeable to and from solid state memory cards.;FLOPPY FLASH;
HIGH PERFORMANCE DIGITAL FILM LEXAR MEDIA, INC. 47300 Bayside Parkway Fremont CA 94538 SOLID STATE MEMORY CARDS;DIGITAL FILM;
INFOTROL SANDisk Corporation 951 SANDISK DRIVE MILPITAS CA 95035 SOLID STATE MEMORY CARDS FOR CARRYING DATA;INFORMATION CONTROL;
MELCARD MITSUBISHI ELECTRONICS AMERICA, INC. 5665 Plaza Drive Cypress CA 906300007 solid state memory cards;
SUNDISK Sun Microsystems, Inc. 4150 Network Circle Santa Clara CA 95054 solid state memory cards, controllers, and integrated circuits for cameras;SUN DISK;
SUNDISK SUNDISK CORPORATION 3270 Jay Street Santa Clara CA 95054 solid state memory cards, controllers, and integrated circuits for portable computers;SUN DISK;
TAPE CARRIER PACKAGING MITSUBISHI ELECTRONICS AMERICAS, INC. 1050 E. Arques Avenue Sunnyvale CA 94086 solid state memory cards and solid state semi-conductor devices;
TCP MITSUBISHI ELECTRONICS AMERICA, INC. 5665 Plaza Drive Cypress CA 906300007 solid state memory cards and solid state semi-conductor devices;
THE DIGITAL FILM COMPANY LEXAR MEDIA, INC. 47300 Bayside Parkway Fremont CA 94538 SOLID STATE MEMORY CARDS;DIGITAL FILM;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Redundant capacity in a memory system is utilized to facilitate active monitoring of solid state memory devices in the memory system. All or part of the data stored in an active solid state memory device, and used in an active data processing system, may be copied to at least one redundant memory device, e.g., by transitioning a memory address range that was allocated to the active memory device to the redundant memory device. By doing so, memory access requests for the memory address range, which would normally be directed to the active memory device, may instead be directed to the redundant memory device, thus enabling the active memory device to be tested (e.g., via writing and reading test data patterns to the active memory device) without interrupting system access to that memory address range.