VAPOR TRAP ATOMIC DEPOSITION

Brand	Owner	Address	Description
ALD SHIELD	ULTRATECH, INC.	3050 Zanker Road San Jose CA 95134	vapor trap for atomic deposition layering machines;ALD;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.