ATOMIC LAYER DEPOSITION MACHINES

Brand Owner (click to sort) Address Description
SAVANNAH VEECO INSTRUMENTS INC. 1 Terminal Drive Plainview NY 11803 Atomic layer deposition machines for a variety of coating applications, namely, gate dielectrics, gate electrodes, metal interconnects, diffusion barriers, DRAM, multilayer-capacitors, read heads, antireflection, optical filters, OLED layers, photonic crystals, transparent conductors, electroluminescence, solar cells, lasers, integrated optics, MEMS, etch resistance, hydrophobic / antistiction, blade edges, molds and dies, solid lubricants, anti corrosion, inside pores, nanotubes, around particles AFM tips, chemicals, catalysis, fuel cells, roll to roll, internal tube liners, nano-glue, biocompatible, and magnetics, among others; semiconductor wafer processing machines; deposition machines comprised in part of a reaction chamber, precursor lines, and a cabinet for coating;
SAVANNAH Cambridge NanoTech Inc. 68 Rogers Street Cambridge MA 02142 Atomic layer deposition machines for a variety of coating applications, namely, gate dielectrics, gate electrodes, metal interconnects, diffusion barriers, DRAM, multilayer-capacitors, read heads, antireflection, optical filters, OLED layers, photonic crystals, transparent conductors, electroluminescence, solar cells, lasers, integrated optics, MEMS, etch resistance, hydrophobic / antistiction, blade edges, molds and dies, solid lubricants, anti corrosion, inside pores, nanotubes, around particles AFM tips, chemicals, catalysis, fuel cells, roll to roll, internal tube liners, nano-glue, biocompatible, and magnetics, among others; semiconductor wafer processing machines; deposition machines comprised in part of a reaction chamber, precursor lines, and a cabinet for coating;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.