SILICON DRIFT DETECTORS X RAY

Brand	Owner	Address	Description
ULTIM	OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLSLIMITED	Tubney Woods Abingdon, Oxon OX13 5QX United Kingdom	Silicon drift detectors for X-ray analysis, not for medical use; silicon drift detectors for energy-dispersive X-ray spectroscopy, not for medical use; silicon drift detectors for wavelength dispersive X-ray spectroscopy, not for medical use;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on the drift layer, and an n-type silicon carbide limiting region disposed between the drift layer and a portion of the first p-type region. The limiting region may have a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.